- 非IC关键词
企业档案
- 相关证件：
- 会员类型：普通会员
- 胡先生
- 电话：0755-85260989-2808/075585260989/075585260989
- 手机：18902444759//
- 地址：宝安区82区华丰科技园C座4楼
- 传真：0755-85260990-2822
- E-mail：forhu@xuyoe.com
产品分类
电源IC(10)二极管(5)三极管(6)场效应管MOSFET(18)光电子/光纤/激光(7)
- LED驱动IC(10)
- 桥堆/整流桥/桥式整流器(1)
- 快/超快/特快恢复二极管(1)
- MOSFET(17)
- 光电光耦合器(光耦)(2)
您的当前位置：深圳市世纪煦阳电子有限公司 > 元器件产品
代理2SK4107，东芝MOS管，原装现货。
品牌/商标：
TOSHIBA/东芝
型号/规格：
2SK4107(F,T)
种类：
*缘栅(MOSFET)
沟道类型：
N沟道
导电方式：
增强型
用途：
MOS-TPBM/三相桥
封装外形：
SP/*外形
材料：
IGBT*缘栅比*
产品信息
2SK4107
2
TOSHIBA Field Effect Transistor Silicon N-Channel MOS T*e (π -MOS VI)
2SK4107
○ Switching Regulator Applications
• Low drain−source ON resistance : R
DS
(ON)
= 0. 33 Ω (t*.)
• High forward transfer admittance : |Y
fs
| = 8.5 S (t*.)
• Low leakage current : I
DSS
= 100 μA (max) (V
DS
= 500 V)
• Enhancement mode : V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain−source voltage V
DSS
500 V
Drain−gate voltage (R
GS
= 20 k?) V
DGR
500 V
Gate−source voltage V
GSS
&plu*n;30 V
DC (Note 1) I
D
15 A
Drain current
Pulse (Note 1) I
DP
60 A
Drain power dissipation (Tc = 25°C) P
D
150 W
Single-pulse avalanche energy
(Note 2)
E
AS
765 mJ
Avalanche current I
AR
15 A
Repetitive avalanche energy (Note 3) E
AR
15 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case R
th (ch−c)
0.833 °C/W
Thermal resistance, channel to
ambient
R
th (ch−a)
50 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 5.78 mH, R
G
= 25 ?, I
AR
= 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC ―
JEITA ―
TOSHIBA 2-16C1B
Weight: 4.6 g (t*.)
2
TOSHIBA Field Effect Transistor Silicon N-Channel MOS T*e (π -MOS VI)
2SK4107
○ Switching Regulator Applications
• Low drain−source ON resistance : R
DS
(ON)
= 0. 33 Ω (t*.)
• High forward transfer admittance : |Y
fs
| = 8.5 S (t*.)
• Low leakage current : I
DSS
= 100 μA (max) (V
DS
= 500 V)
• Enhancement mode : V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain−source voltage V
DSS
500 V
Drain−gate voltage (R
GS
= 20 k?) V
DGR
500 V
Gate−source voltage V
GSS
&plu*n;30 V
DC (Note 1) I
D
15 A
Drain current
Pulse (Note 1) I
DP
60 A
Drain power dissipation (Tc = 25°C) P
D
150 W
Single-pulse avalanche energy
(Note 2)
E
AS
765 mJ
Avalanche current I
AR
15 A
Repetitive avalanche energy (Note 3) E
AR
15 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case R
th (ch−c)
0.833 °C/W
Thermal resistance, channel to
ambient
R
th (ch−a)
50 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 5.78 mH, R
G
= 25 ?, I
AR
= 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC ―
JEITA ―
TOSHIBA 2-16C1B
Weight: 4.6 g (t*.)